By S. Ossicini L. Pavesi F. Priolo Stefano Ossicini

ISBN-10: 3540402330

ISBN-13: 9783540402336

A fascinating insight into the cutting-edge in silicon microphotonics and on what we will anticipate within the close to destiny. The ebook offers an outline of the present knowing of having mild from silicon. It concentrates generally on low dimensional silicon buildings, like quantum dots, wires and wells, yet covers additionally substitute methods like porous silicon and the doping of silicon with rare-earths. The emphasis is at the experimental and theoretical achievements about the optoelectronic homes of restricted silicon buildings acquired in the course of fresh years. Silicon established photonic crystals are particularly thought of. a close dialogue of the path in the direction of a silicon laser is gifted.

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Extra info for Light Emitting Silicon for Microphotonics, Springer Tracts in Modern Physics Volume 194

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Another important point is the direct or indirect nature of the band gap in Si quantum wells. To answer this question, first-principle calculations for Si and Ge free-standing films, which are constructed with the same lattice periodicity and the same interatomic distance as in the bulk, have been performed [52, 53, 54]. Their surfaces are oriented along (100), (110), and (111) directions and saturated with H. For each orientation, two effective thicknesses 48 2 Electron States and Optical Properties Fig.

However the use of sufficiently large supercells that allows one to describe a system without imposing any symmetry constraints or artificial periodicity requires a large number of atoms per cell and, consequently, large computer resources. 2 Silicon Quantum Wells All the calculations performed on confined Si structures give a similar picture concerning the quantum confinement effect: a widening of the band gap from the near-infrared wavelength region to and beyond the visible region. Furthermore an enhancement of the dipole matrix elements responsible of the radiative transitions is found.

The peak positions and the relative intensities of the main structures are now in good agreement with experiment. The remaining slight overestimate is of the order of what has been predicted to be the contribution of dynamical Fig. 2. Absorption spectra of bulk Si. Result obtained with the inclusion of the random phase approximation (RPA) and quasiparticle shifts (short-dashed line); result obtained with the inclusion of local field effects (long-dashed line), result obtained with both electron–hole attraction and local field effects (solid line).

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Light Emitting Silicon for Microphotonics, Springer Tracts in Modern Physics Volume 194 by S. Ossicini L. Pavesi F. Priolo Stefano Ossicini


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